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| FDP8860 N-Channel PowerTrench(R) MOSFET September 2006 FDP8860 N-Channel PowerTrench(R) MOSFET 30V, 80A, 2.5m Features General Description Max rDS(on) = 2.5m at VGS = 10V, ID = 80A Max rDS(on) = 2.9m at VGS = 4.5V, ID = 80A Low Miller Charge Low Qrr Body Diode UIL Capability (Single Pulse and Repetitive Pulse) RoHS Compliant tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application DC - DC Conversion Start / Alternator Sytems D G G D TO-220 S FDP Series S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Pulsed Single Pulse Avalanche Energy Power Dissipation Operating and Storage Temperature TC = 25C TC = 25C (Note 1) (Note 2) Ratings 30 20 80 219 556 673 254 -55 to +175 mJ W C A Units V V Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case TO220 Thermal Resistance, Junction to Ambient TO220 0.59 62 C/W Package Marking and Ordering Information Device Marking FDP8860 Device FDP8860 Package TO220AB Reel Size Tube Tape Width N/A Quantity 50 units (c)2006 Fairchild Semiconductor Corporation FDP8860 Rev.B 1 www.fairchildsemi.com FDP8860 N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 1mA, VGS = 0V ID = 1mA, referenced to 25C VDS = 24V, VGS = 0V VGS = 20V TJ = 150C 30 22 1 250 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 80A Drain to Source On Resistance VGS = 5V, ID = 80A VGS = 4.5V, ID = 80A VGS = 10V, ID = 80A, TJ = 150C Forward Transconductance VDS = 10V, ID = 80A 1 1.6 -9.6 1.9 2.0 2.1 2.9 3.4 2.5 2.8 2.9 3.8 S m 2.5 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 9200 1700 1060 1.7 12240 2260 1590 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(5) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Total Gate Charge at 5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 5V VDD = 15V ID = 80A VDD = 15V, ID = 80A VGS = 5V, RGEN = 3 35 135 64 59 158 81 27 33 56 216 103 95 222 114 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 80A VGS = 0V, IS = 40A IF = 80A, di/dt = 100A/s 0.88 0.81 60 74 1.25 1.2 90 111 V ns nC Notes: 1: Pulse Test: Pulse Width < 80s, Duty cycle < 0.5%. 2: Starting TJ =25oC, L= 0.3mH, IAS = 67A,VDD = 27V, VGS = 10V. FDP8860 Rev.B 2 www.fairchildsemi.com FDP8860 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted V DURATION = 80s PULSEGS = 4V DUTY CYCLE = 0.5%MAX VGS = 4V VGS = 4.5V VGS = 10V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 320 4 VGS = 3V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) 240 3 VGS = 3.5V 160 VGS = 3.5V 2 VGS = 4.5V VGS = 4V 80 VGS =3V 1 VGS = 10V 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 0 0 80 160 240 ID, DRAIN CURRENT(A) 320 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID = 80A VGS = 10V 10 ID = 50A 8 6 4 2 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX TJ = 175oC TJ = 25oC 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 300 100 VGS = 0V 160 ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 120 VDD = 5V 10 1 0.1 0.01 1E-3 0.0 TJ = 175oC 80 TJ = 175oC TJ = 25oC TJ = - 55oC TJ = 25oC 40 TJ = -55oC 0 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 0.3 0.6 0.9 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDP8860 Rev.B 3 www.fairchildsemi.com FDP8860 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 4 2 0 VDD = 12V 20000 10000 CAPACITANCE (pF) Ciss f = 1MHz VGS = 0V VDD = 15V VDD = 18V Coss Crss 1000 500 0 40 80 120 Qg, GATE CHARGE(nC) 160 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 280 ID, DRAIN CURRENT (A) 240 200 160 120 80 40 RJC = 0.59 C/W o 200 IAS, AVALANCHE CURRENT(A) 100 VGS=10V TJ = 25oC 10 TJ = 175oC VGS=4.5V Limited by Package 1 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 0 25 50 75 100 125 o 150 175 tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability P(PK), PEAK TRANSIENT POWER (W) Figure 10. Maximum Continuous Drain Current vs Case Temperature 10 5 2000 1000 10us ID, DRAIN CURRENT (A) VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - T C ---------------------125 TC = 25oC 100 LIMITED BY PACKAGE 100us 10 4 10 1 0.1 1 OPERATION IN THIS SINGLE PULSE TJ = MAX RATED AREA MAY BE LIMITED BY rDS(on) TC = 25OC 1ms 10ms DC 10 3 SINGLE PULSE 10 VDS, DRAIN-SOURCE VOLTAGE (V) 50 10 -5 10 2 10 -4 10 10 10 t, PULSE WIDTH (s) -3 -2 -1 10 0 10 1 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDP8860 Rev.B 4 www.fairchildsemi.com FDP8860 N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM 0.01 SINGLE PULSE t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 1E-3 -5 10 10 -4 10 10 t, RECTANGULAR PULSE DURATION (s) -3 -2 10 -1 10 0 10 1 Figure 13. Transient Thermal Response Curve FDP8860 Rev.B 5 www.fairchildsemi.com FDP8860 N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I20 FDP8860 Rev. B 6 www.fairchildsemi.com |
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